APTGT300TL65G APTGT300TL65G C rev 1 october, 2012 www.microsemi.com 1-8 all ratings @ t j = 25c unless otherwise specified q1 to q4 absolute maximum ratings these devices are sens itive to electrostatic discharge. proper handling procedures should be follow ed. see application note apt0502 on www.microsemi.com 0/vbus out cr6 cr5 neutral vbus e3e4 g3 g1g2 e2 q4 q3 g4 e1 q1q2 e1 neutral e4 out 0/vbus g2 e2 g1 g3 e3 vbus g4 symbol parameter max ratings unit v ces collector - emitter breakdown voltage 650 v i c continuous collector current t c = 25c 400 a t c = 80c 300 i cm pulsed collector current t c = 25c 600 v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 935 w rbsoa reverse bias safe operating area t j = 150c 600a @ 600v v ces = 650v i c = 300a @ tc = 80c application ? solar converter ? uninterruptible power supplies features ? trench + field stop igbt technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant three level inverter trench + field stop igbt3 power module cr1 cr2 cr3 cr4 downloaded from: http:///
APTGT300TL65G APTGT300TL65G C rev 1 october, 2012 www.microsemi.com 2-8 q1 to q4 electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 650v 350 a v ce(sat) collector emitter saturation voltage v ge =15v i c = 300a t j = 25c 1.5 1.9 v t j = 150c 1.7 v ge ( th ) gate threshold voltage v ge = v ce , i c = 5 ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 800 na q1 to q4 dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 18.4 nf c oes output capacitance 1.16 c res reverse transfer capacitance 0.54 q g gate charge v ge =15v, i c =300a v ce =300v 3.2 c t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 300v i c = 300a r g = 2.2 115 ns t r rise time 45 t d(off) turn-off delay time 225 t f fall time 55 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v bus = 300v i c = 300a r g = 2.2 130 ns t r rise time 50 t d(off) turn-off delay time 300 t f fall time 70 e on turn on energy v ge = 15v v bus = 300v i c = 300a r g = 2.2 t j = 25c 1.7 mj t j = 150c 3 e off turn off energy t j = 25c 8.2 mj t j = 150c 10.6 i sc short circuit data v ge 15v ; v bus = 360v t p 6s ; t j = 150c 1500 a r thjc junction to case thermal resistance 0.16 c/w downloaded from: http:///
APTGT300TL65G APTGT300TL65G C rev 1 october, 2012 www.microsemi.com 3-8 cr1 to cr4 diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 650 v i rm maximum reverse leakage current v r =650v t j = 25c 150 a t j = 150c 400 i f dc forward current tc = 80c 200 a v f diode forward voltage i f = 200a v ge = 0v t j = 25c 1.6 2 v t j = 150c 1.5 t rr reverse recovery time i f = 200a v r = 300v di/dt =2800a/s t j = 25c 125 ns t j = 150c 220 q rr reverse recovery charge t j = 25c 9.4 c t j = 150c 19.8 e rr reverse recovery energy t j = 25c 2.2 mj t j = 150c 4.8 r thjc junction to case thermal resistance 0.39 c/w cr5 & cr6 diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 650 v i rm maximum reverse leakage current v r =650v t j = 25c 150 a t j = 150c 400 i f dc forward current tc = 80c 300 a v f diode forward voltage i f = 300a v ge = 0v t j = 25c 1.6 2 v t j = 150c 1.5 t rr reverse recovery time i f = 300a v r = 300v di/dt =4000a/s t j = 25c 130 ns t j = 150c 225 q rr reverse recovery charge t j = 25c 13.7 c t j = 150c 29 e rr reverse recovery energy t j = 25c 3.2 mj t j = 150c 7 r thjc junction to case thermal resistance 0.29 c/w thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 c t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m6 3 5 n.m for terminals m5 2 3.5 wt package weight 300 g downloaded from: http:///
APTGT300TL65G APTGT300TL65G C rev 1 october, 2012 www.microsemi.com 4-8 sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructions for sp6 power modules on www.microsemi.com q1 to q4 typical performance curve hard switching 0 20 40 60 80 0 100 200 300 400 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =2.2 ? t j =150c t c =85c operating frequency vs collector current downloaded from: http:///
APTGT300TL65G APTGT300TL65G C rev 1 october, 2012 www.microsemi.com 5-8 output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 100 200 300 400 500 00 . 511 . 522 . 5 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 100 200 300 400 500 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 100 200 300 400 500 567891 01 1 v ge (v) i c (a) energy losses vs collector current eon eoff 0 4 8 12 16 0 100 200 300 400 500 i c (a) e (mj) v ce = 300v v ge = 15v r g = 2.2 ? t j = 150c eon eoff eoff 0 4 8 12 16 20 0 2.5 5 7.5 10 12.5 15 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 300a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =2.2 ? maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) downloaded from: http:///
APTGT300TL65G APTGT300TL65G C rev 1 october, 2012 www.microsemi.com 6-8 cr1 to cr4 typical performance curve energy losses vs collector current 0 2 4 6 8 0 100 200 300 400 i f (a) e rr (mj) v ce = 300v r g = 1.8 ? t j = 150c 0 1 2 3 4 5 0 2.5 5 7.5 10 12.5 15 gate resistance (ohms) e rr (mj) v ce = 300v i c = 200a t j = 150c switching energy losses vs gate resistance maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) forward characteristic of diode t j =25c t j =150c 0 100 200 300 400 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) downloaded from: http:///
APTGT300TL65G APTGT300TL65G C rev 1 october, 2012 www.microsemi.com 7-8 cr5 & cr6 typical performance curve energy losses vs collector current 0 2 4 6 8 10 0 100 200 300 400 500 i f (a) e rr (mj) v ce = 300v r g = 2.2 ? t j = 150c 0 2 4 6 8 0 2.5 5 7.5 10 12.5 15 gate resistance (ohms) e rr (mj) v ce = 300v i f = 300a t j = 150c switching energy losses vs gate resistance maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) forward characteristic of diode t j =25c t j =150c 0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) downloaded from: http:///
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